Abstract
Heterogeneous integrated InP high electron mobility transistors (HEMTs) on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene (BCB) bonding technology. The channel of the new device is In0.7Ga0.3As, and the gate length is 100 nm. A maximum extrinsic transconductance g m,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained. The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz. In addition, a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.
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