Abstract
We discuss two distinct examples of epitaxy of materials that are very dissimilar in lattice parameter, crystal structure, bonding character and hence, properties. The growth of ferromagnetic hexagonal MnAs on cubic GaAs(0 0 1) opens the door to spin-electronics operating at 300 K and the fabrication of M-plane (Al,Ga,In)N heterostructures on LiAlO 2(1 0 0), which are free of internal electric fields, provides the basis for high internal quantum efficiency of blue/UV light emitters. In both examples, the precise materials engineering at the atomic level during interface formation has become possible by using functional self-organized molecular beam epitaxy.
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