Abstract
We demonstrate that LaLuO3 films can be grown epitaxially on sulfur-passivated GaAs(111)A substrates by atomic layer deposition (ALD). Transmission electron microscopy and x-ray diffraction analyses reveal that the oxide film exhibits a cubic structure with a lattice mismatch of −3.8% relative to GaAs. The epitaxial layer has a high degree of crystalline perfection and is relaxed. Electrical characterizations performed on this structure show interfaces with a low interface state density of ∼7×1011 cm−2 eV−1. The measured dielectric constant is around 30, which is close to its bulk crystalline value. In contrast, ALD LaLuO3 is polycrystalline on GaAs(100) and amorphous on Si(111).
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