Abstract
1-D Ga2O3-GaN core-shell nanorods were successfully fabricated by two-step synthesis processes. The Ga2O3 nanorods were synthesized by the reaction of Ga with SiO2 at 600{degree sign}C. Subsequently, one dimensional Ga2O3-GaN core-shell nanorods were successfully achieved by nitrifying the as-synthesized Ga2O3 nanorods under ammonia ambient at 700{degree sign}C for 6 hours. The field-emission scanning electron microscope (FESEM, JSM- 6500F), X-ray spectrometer (SHINMADZU), and the field-emission transmission electron microscope (FETEM, JEM-3000F) were utilized to investigate the morphologies, crystal structures, and compositions of nanorods in detail, respectively. Furthermore, optical investigation of Ga2O3-GaN coaxial nanorods heterostructures was carried out by photoluminescence (PL) measurements in present study.
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