Abstract
Cube-textured Ni(001) foils have been considered as a viable alternative substrate to grow high quality functional films for large area optoelectronic devices. In this work, we report the heteroepitaxial growth of CaF2(001) films on cube-textured Ni(001) foils at 350–600°C with in-plane orientation of CaF2[110]//Ni[100] and CaF2[1-10]//Ni[010] with 45° rotation respect to the Ni(001) substrate. Unlike CaF2(111)/Ni(001) films where there exist four independent rotational domains with rotational domain boundaries, CaF2(001)/Ni(001) contains no rotational domains or rotational domain boundaries. This makes CaF2(001)/Ni(001) films better candidates as templates for the growth of high quality functional semiconductors. We also demonstrate that Ge(001) film with no rotational domains and with a grain size of ~50μm similar to that of the Ni substrate can be grown on the CaF2(001) buffered Ni substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
