Abstract
After the feasibility of diamond CVD growth was convincingly demonstrated by Japanese scientists about a decade ago, heteroepitaxy of diamond thin films on inexpensive single-crystalline substrates has been one of the most important research objectives of CVD diamond technology. In 1992, the controlled heteroepitaxial nucleation of diamond on 3C-SiC epitaxial films and on bare silicon wafers, respectively, was achieved independently by research groups in the USA and Germany. Although the epitaxial growth is of Volmer-Weber type in each case, i.e. polycrystalline with epitaxial orientation of individual crystallites, the physical properties of these films represent a significant improvement over the usual randomly oriented films, owing to the reduction of grain boundary angle distribution to a few degrees. This article discusses the mechanism of heteroepitaxial nucleation and growth of diamond films on silicon and reviews the results of first measurements of electrical and thermal properties.
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