Abstract
-Substantial progress has been realized in both the understanding of the nucleation and growth of heteroepitaxial covalent semiconductors and the demonstration of device applications of these technologies. This paper reviews recent progresses concerning the influence of the substrate orientation, interface configuration, and the initial nucleatio~l on the defect generation and control in the epilayers. This includes considerations of the way in which lattice defects such as antiphase boundaries and dislocations are intoduced at the interface and within the deposits. Emphasis is given to the role of lattice misfit and difference in the thermal expansion cocfficicnts in the formation of lattice defects, as well as in the development of lattice strain in the deposits. Finally several new approches for defect control as well as the actual trends and limitations in the heteroepitaxy of covalent semiconductors are discussed.
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