Abstract
CdTe(2 1 1)B has been grown by molecular beam epitaxy (MBE) on (2 1 1) oriented germanium as an alternative substrate. Germanium was chosen from among several alternative substrate candidates in order to circumvent the weaknesses of the CdTe homosubstrate. CdTe heteroepitaxy was studied for several germanium substrate orientations. The best CdTe growth condition occurs on (2 1 1) oriented germanium substrate. This orientation offers the compatibility required for MBE HgCdTe growth and is the orientation commonly used. The surface morphology of CdTe layers with a diameter of two inches is smooth and mirror-like. The crystalline quality was measured by an X-ray double-crystal rocking curve on {4 2 2} planes. The best full width at half maximum (FWHM) is as low as 75 arcsec. A FWHM map is presented showing a good crystalline uniformity. Transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) characterizations are also presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
