Abstract
CdTe can be grown directly by molecular beam epitaxy on substrates such as GaAs or silicon, which exhibit very large lattice mismatches of 14.6% and 19% respectively. The occurrence of dual epitaxy, which has been previously reported for growth on (100)GaAs, has also been found recently for growth on (211)GaAs. The (133)CdTe-(211)GaAs hetero-interface presents a smooth continuation of the tetrahedral bond network from GaAs to CdTe, which is not the case for the (211)CdTe-(211)GaAs interface. Single-domain, twin-free CdTe(111)B films are currently obtained on Si(100) surface where single atomic steps are dominant. The crystalline quality of CdTe/Si films has been dramatically improved as confirmed by X-ray diffraction, photoluminescence and electron microscopy investigations. The narrowest rocking curves obtained for as-grown epilayers are 70 arcsec for (133)CdTe/(211)GaAs, 50 arcsec for a flash-annealed (211)CdTe/(211)GaAs and 140 arcsec for (111)B CdTe/(100)Si. These results confirm that the CdTe/GaAs and CdTE/Si composite substrates should be viewed as prime candidates to replace bulk CdTe substrates.
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