Heteroepitaxy growth of single crystal diamond on Ir/Pd/Al2O3 (11–20) substrate

Abstract

Pd features good ductility flexibility and plasticity, and it also has a face-centered cubic lattice structure similar to Ir and nearly the same lattice constant. Pd (001) is prepared by magnetron sputtering on Al2O3 (11–20) substrate, and then the Ir (001) grows by epitaxy. Pd acts as the support layer and buffer layer of Ir on Al2O3 to bring down the stress between Ir and substrate. We prepare heteroepitaxial single crystal diamond by BEN on Ir/Pd/Al2O3 (11–20) substrate. 20 × 20 × 0.6 mm3 heteroepitaxial SCD is finally prepared. It shows good crystal quality, with its 004 direction swing curve FWHM = 194 arcsec and 311 direction FWHM = 396 arcsec.