Abstract
CuInSe 2 (CIS) films with Cu/In ratios of γ = 0.81–1.81 have been grown on (001)-oriented GaAs substrates by molecular beam epitaxy at substrate temperatures of T s = 350–550° C. Film properties were found to be substantially different for Cu- and In-rich regions. Cu-rich films were p-type, and streaky reflection high-energy electron diffraction (RHEED) patterns and sharp photoluminescence (PL) emissions were observed, suggesting high quality epitaxial films. In-rich films were highly resistive, and contained a large number of twins formed on {112} planes. A broad and strong PL emission, a donor-acceptor pair emission, was observed, which blue-shifted with increasing excitation power, indicating heavy compensation.
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