Heteroepitaxial ZnO nano hexagons on p-type SiC

Abstract

ZnO single crystal nanohexagons have been grown heteroepitaxially on p-type Si-face 4H–SiC substrates with 8 ° miscut from [0 0 0 1] by catalyst-free atmospheric pressure metalorganic chemical vapor deposition and characterized by x-ray diffraction, scanning and transmission electron microscopy as well as energy disperse x-ray and cathodoluminescence analyses. The as-grown ZnO nanohexagons have a pillar shape terminated by a and c plane facets, and are aligned along the growth direction with the epitaxial relation [0 0 0 1] ZnO‖[0 0 0 1] 4H–SiC and [ 1 0 1 ¯ 0 ] ZnO ∥ [ 1 0 1 ¯ 0 ] 4 H - SiC . The ZnO nanohexagons demonstrate intense UV emission ( λ NBE=376 nm) and negligible defect-related luminescence.