Abstract
Epitaxial TiN(111) films were grown on Si(111) substrates by low energy reactive ion beam deposition using N2 ion beam irradiation and Ti evaporation. TiN epitaxial film formation was investigated as a function of the substrate temperature (T s) and the kinetic energy of the ion beam (E b). Using X-ray diffraction (XRD) and in-situ reflection high-energy electron diffraction (RHEED), the epitaxial relationship was found to be TiN(111)|| Si(111), TiN<110>|| Si<110> above substrate temperature of 400° C. Cross-sectional bright-field transmission electron microscope (TEM) observation has shown that the interface is quite flat and sharp and that four TiN lattice spacings match three spacings of the Si lattice. A lowest resistivity value of 18 µΩ· cm (T s=600° C, E b=100 eV) was obtained.
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