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Abstract
A ferroelectric/multiferroic structure composed of (Pb0.9Sr0.1)TiO3 (PST) and (Bi0.9La0.1)FeO3 (BLF) was heteroepitaxially deposited on a LaNiO3 buffered (001) SrTiO3 substrate by pulse laser deposition. Interestingly, the PST layer was acting as a buffering layer between BLF and electrode to suppress the migration of free carries in the heterostructure. A well-grown crystalline dense structure was observed from the surface morphology of PST/BLF/PST heterostructure. Moreover, the PST/BLF/PST trilayer exhibited improved ferroelectric and dielectric behaviors, together with two orders of magnitude lower leakage current and higher dielectric constant. Our result indicate that the multiferroic PST/BLF/PST heterostructure may have a promising application for the future high-density memory.
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