Abstract
Recently although great progresses have been made about direct epitaxial growth of III-V quantum dot (QD) lasers on Si, especially on SOI substrates, monolithic integration light sources with optical waveguides are still absent. Here, we demonstrated the first embedded InAs/GaAs QD laser directly grown on the trenched SOI platform with monolithically integrated silicon waveguides. By utilizing "U"-shape patterned grating structures, high-performance QD lasers were grown and fabricated on the trenched SOI platform. After great efforts for alignment between III-V QD lasers and the silicon waveguides, a 6.8 mW output power was achieved from the end tip of the butt-coupled waveguides, with the estimated coupling efficiency of approximately -7.35 dB.
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