Abstract
Heteroepitaxial InP layers were grown by metalorganic chemical vapor deposition on novel GaAs buffer layers on Si substrates. The GaAs buffers were prepared by molecular beam epitaxy and show a reduced threading dislocation density achieved by inserting one nanometer thick Si interlayers. The structural and optoelectronic properties of the heteroepitaxial InP layers, which were investigated by transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy, show improvements attributed to the optimized GaAs buffer layers.
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