Abstract
In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si /γ- Al 2 O 3/ Si . First, single crystalline γ- Al 2 O 3(100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on γ- Al 2 O 3(100)/ Si (100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si /γ- Al 2 O 3(100)/ Si (100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si /γ- Al 2 O 3(100)/ Si (100) has been fabricated successfully and can be used for application of MOS device.
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