Heteroepitaxial growth of InN on Si(111) using a GaAs intermediate layer

Abstract

Thermal nitridation of GaAs(111) in flowing NH 3 and MOCVD growth of InN on the nitrided GaAs(111) have been studied. A GaN layer with a smooth surface and a uniform thickness is formed on GaAs(111) as a result of the thermal nitridation. The growth rate of GaN on GaAs(111) is considerably larger than that on GaAs(100) surface. The crystalline structure of GaN layer is dependent on nitridation temperature; a cubic lattice for GaN formed at a relatively low temperature (∼ 600°C) and a hexagonal lattice at a high temperature (∼900°C). A hexagonal InN layer with an excellent surface morphology is heteroepitaxially grown on nitrided bulk GaAs(111). Using a thin (∼0.5 μm) GaAs(111) layer on Si(111), an InN/GaN/Si structure is obtained by adjusting nitridation temperature for GaAs(111) layer. Through these investigations, it has been demonstrated for the first time that a nitrided bulk GaAs(111) can be used as a substrate for InN growth and, furthermore, a nitrided GaAs(111) layer on Si(111) can be employed as an intermediate layer for the heteroepitaxial growth of InN on Si.