Abstract
We report on the growth of an In0.30Ga0.70As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 107 cm−2 with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with IDS of 70 μA/μm and gm of above 60 μS/μm, demonstrating the high quality of the grown materials.
Highlights
InGaAs high-electron mobility transistors (HEMT) are routinely used for the fabrication of high-frequency, low power amplifiers.[1]
We report on the growth of an In0.30Ga0.70As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy
No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with IDS of 70 μA/μm and gm of above 60 μS/μm, demonstrating the high quality of the grown materials
Summary
InGaAs high-electron mobility transistors (HEMT) are routinely used for the fabrication of high-frequency, low power amplifiers.[1]. Commercial InGaAs HEMTs fabricated on InP and GaAs substrates are not available in such sizes, precluding wafer-level integration with Si CMOS We address this integration challenge by growing InGaAs HEMTs directly on 200 mm silicon substrates, which makes them amenable to being integrated with a Si CMOS device layer directly at the wafer level. We report on heteroepitaxial growth of an InGaAs HEMT on a 200 mm Si substrate It comprises a pure Ge layer, GaAs and an InAlAs compositionally graded buffer followed by the HEMT device layers.
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