Abstract
Germanium-rich silicon-germanium (Si1-xGex: 0.98≤x≤1) films were epitaxially grown on Si (001) substrate by reactive thermal chemical vapor deposition at low temperature. Si2H6 and GeF4 were used as source gases. The effect of gas flow ratio between Si2H6 and GeF4 was studied to optimize the film quality. The results indicated that Si1-xGex (x≥0.99) epilayer can be prepared directly on Si wafer at 350°C with a threading dislocation density of ~7×105/cm2 and surface RMS roughness of 1.0 nm. Hall-effect and conductivity measurements revealed that the epilayer was p-type conduction with the hall mobility of 767 cm2/Vs and the hole concentration of 6.08×1016/cm3. Those results indicated the Ge-rich Si1-xGex was an excellent candidate for bottom cells of multijunction solar cells.
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