Abstract
Experimental conditions to obtain heteroepitaxial (100) GaAs/InP structure were studied using the selective liquid phase epitaxy (SLPE) technique. It was observed that maximum epitaxial layer overgrowth (ELO) can be obtained by aligning the growth seed along the 75° off [011] direction. The ELO width decreased as the mask width decreased, probably due to As depletion above the oxide mask, which could be partly compensated by convecting the melt. The ELO width was substantially increased by adding Si, P or Se to the Ga growth melt. Se addition, in particular, prevented meltback of substrates during the growth of GaAs on InP, resulting in a continuous specular GaAs film. Cross-sectional transmission electron microscopy (TEM) study of the layers revealed that propagation of the misfit dislocations at the GaAs/InP interface is effectively suppressed by the presence of the SiO2 mask, except for some dislocations that propagate toward the top of the mask by bending at the mask edge.
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