Abstract
Heteroepitaxial growth of CaF2 films on (511)Si and GaAs films on CaF2 /Si(511) structures is investigated. CaF2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measurements and replica transmission electron microscopy show that CaF2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 s after the growth at 550°C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF2/Si(511) structures. Differences in crystalline defects between GaAs films grown on (511) substrates and those on (100) substrates are discussed based on results obtained from cross-sectional transmission electron microscopy.
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