Abstract
The heteroepitaxial growth of chalcopyrite-type CuAlSe2 has been performed on GaAs (100) or CaF2 (111) substrates by molecular beam epitaxy. In this study, the film properties which depend on the growth conditions such as the beam flux ratio and the substrate temperature were examined. The epitaxial films of CuAlSe2 were obtained under the following conditions: the substrate temperature was 600°C and the beam flux ratio of Cu to Al was about 0.3 on both GaAs and CaF2 substrate.
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