Abstract
The effect of YSZ thickness on the epitaxial growth of CeO 2 on Si(001) was investigated. The CeO 2/YSZ/Si thin films were prepared by pulsed laser deposition. The X-ray pole figure measurement revealed that heteroepitaxial growth of CeO 2 is realized with a 0.5-nm-thick YSZ thin film which corresponds to one unit cell of YSZ. However, when the thickness of the YSZ thin film was 0.5 nm, traces of the CeO 2(111) diffraction were also detected. The CeO 2(111) diffraction was not detected for samples having more than 1.5 nm of YSZ thickness. Therefore 1.5 nm YSZ is enough to permit the complete epitaxial growth of CeO 2 on Si(001). The effect of such ultra thin YSZ on the heteroepitaxial growth of CeO 2 has not been reported thus far.
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