Abstract
A heteroepitaxial growth of 3C-SiC on Si substrates has been realized at 1000 ° C by a hot-wall type LPCVD with an alternate supply of C2H2 and SiH2Cl2. The crystallinity of the grown SiC layer is influenced by orientation of Si substrates. A single crystalline 3C-SiC has been grown on Si(111) face, while a polycrystalline 3C-SiC on Si (001) face. A growth rate of SiC with alternate gas supply is almost 3 ML/cycle and independent of the duration of SiH2Cl2 supply from 3 s to 12 s. A simultaneous supply of SiH2Cl2 and C2H2 never produces the SiC film but SiC whiskers. This difference is supposed to be brought about through different mechanisms of SiC growth between the alternate gas supply and the simultaneous one. The growth mechanism of the SiC film is discussed using QMS measurement results and attributed to adsorbed SiCl2 molecules at hollow bridge sites.
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