Abstract
We have succeeded in achieving the heteroepitaxial growth of a δ-Bi 2O 3 thin film on a CaF 2(1 1 1) substrate by means of chemical vapour deposition under atmospheric pressure. The film grew with a strong (1 1 1) orientation. From X-ray pole figures, it was observed that the δ-Bi 2O 3 film grew on the CaF 2(1 1 1) substrate with 60° rotational in-plane domains. The growth mode was of a 3D island type, and the grain size decreased with increasing oxygen pressure during the δ-Bi 2O 3 film growth, improving the overall surface smoothness.
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