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Abstract
In this study, ε-(AlxGa1−x)2O3 alloy films were grown on c-plane AlN templates by mist chemical vapor deposition. The Al content of two samples was determined by Rutherford backscattering analysis. The lattice constant of the ε-(AlxGa1−x)2O3 alloy films followed Vegard's law, and the Al contents of other samples were determined to be as high as x = 0.395 by Vegard's law. The direct bandgap was obtained in the range of 5.0–5.9 eV by transmittance measurements. The valence-band offset between ε-(Al0.395Ga0.605)2O3 and ε-Ga2O3 was analyzed to be 0.2 eV, and the conduction-band offset was calculated to be 0.7 eV by X-ray photoelectron spectroscopy. The ε-(AlxGa1−x)2O3/ε-Ga2O3 interface band discontinuity was type I. Our experimental results will be important for the actual application of ε-(AlxGa1−x)2O3/ε-Ga2O3 heterojunction devices.
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