Abstract
The lattice matching condition usually encountered in heteroepitaxial growth has been found to be relaxed greatly when the interface between constituent materials has Van der Waals nature and forms no direct chemical bonds. Layered transition metal dichalcogenides are the typical materials having that nature, and a variety of heterostructures can be grown by using them. This kind of approach has been proved to be applied also to heteroepitaxial growth between such quasi-one-dimensional materials as tellurium and selenium, that onto dangling-bond terminated three-dimensional material substrates, and that of organic materials forming Van der Waals type crystals.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
