Heteroepitaxial growth and band alignment of β-Ga2O3 on GaN substrate grown by non-vacuum mist-CVD

Abstract

Recently, Ga2O3 has attracted widespread attention from domestic and foreign research scholars due to its large bandgap and high breakdown electric field. And it has huge application prospects in many fields such as optoelectronic devices, transistors, and high-power devices. Different from the traditional expensive and complex methods such as PLD, MOCVD, and MBE to epitaxially grow the Ga2O3 films, the low-cost, non-vacuum, easy-to-operate mist-CVD method has been focused. In this work, (2‾01) β-Ga2O3 has been heterogeneously grown on (0001) GaN. According to AFM and XPS results, the RMS of β-Ga2O3 thin films is 4.05 nm, the conduction band excursion ΔEC of the band alignment of β-Ga2O3/GaN is 1.26 eV, the valence band excursion ΔEV is 0.4 eV, and then the band alignment of β-Ga2O3/GaN heterojunction is obtained. These results prove the application potential of β-Ga2O3/GaN heterojunction in devices and the huge advantages and future development potential of the mist-CVD method.