Abstract
Growth of layered III-VI compound semiconductor GaSe on a GaAs(111)B substrate has been investigated for the purpose of an effective passivation of the GaAs surface. Although GaSe and GaAs have completely different lattice structures, it has been found that a good GaSe film having its own lattice constant grows epitaxially. The growth proceeds by weak Van der Waals forces between each layer of GaSe so that the lattice matching condition is drastically relaxed. The photoluminescence intensity of the GaAs(111)B surface covered by the GaSe film is larger than that of an as-etched surface, even after the sample has been left in air for a month. The decay of the photoluminescence intensity of the GaSe-covered surface has been found to be slower than that of the sulfur-passivated surface, indicating its excellent ability for the passivation. This seems to result from the stability of covering GaSe film in addition to the proper termination of dangling bonds by selenium atoms at the GaSe/GaAs interface.
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