Abstract
We design and demonstrate optically pumped microlasers with a hetero-core cavity formed by III-V and silicon-on-insulator (SOI) materials. Hetero-core cavities with identical lateral dimension are fabricated. The cavity is formed by III-V layer with thickness of 210 nm on top of SOI layer with thickness of 300 nm via SiO2 interlayer wafer bonding. Continuous wave laser operation is achieved for a diameter down to 2 μm with a corresponding mode volume of 0.07λ3 and quality factor of 1.3×104. The architecture renders an alternative laser structure for heterogeneous laser-on-chip, with no dedicated vertical coupling mechanism needed between the two materials' layers.
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