Abstract
The GaAs-based HEMT device is prepared by MBE. The device resistance is 300Ω. The structure size of the bow-tie antenna is simulated and optimized with HFSS. The optimization process uses a lumped source feed to realize the impedance matching of the bow-tie antenna and the two-dimensional electron gas (2DEG) channel. The optimized antenna gain can reach 6dB and the voltage standing wave ratio (VSWR) is 1.35. The VDI company 0.3THz terahertz source is used to measure the device. The measurement results show that the device has good polarization characteristics, the signal to noise ratio (SNR) is 80, the detection response rate is 5.11V/W, and the response rate is in the same order of magnitude as the theoretical calculation.
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