Abstract

A high electron mobility transistor (HEMT) is used with a single‐electron transistor (SET) to measure single electrons tunnelling into individual InGaAs quantum dots. The SET detects a change in location of an electron once it tunnels from an underlying n‐doped layer into a quantum dot lying in an intermediate layer. A HEMT on the He3 stage with the SET is used to extend the measurement bandwidth to 400 kHz. We demonstrate this technique with a measurement of the Stark shift in the first electron state of the quantum dot as a function of lateral electric field.

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