Abstract
Hemispherical image sensors are very promising technology for cameras, surveillance systems and artificial vision. We report on the electrical performance of the hydrogenated amorphous silicon thin-film transistor passive pixel image sensor (PPS) circuits fabricated on a hemispherical substrate using maskless laser-write lithography (LWL). The level-to-level registration and alignment over the curved surface with a high accuracy are demonstrated for the LWL in this work. The obtained results clearly show that it is possible to realize active-matrix PPS with a 150 μm pixel pitch and a dynamic range of about 40 dB that is suitable for hemispherical image sensors.
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