Abstract
Absorption spectroscopy in (3)He and (4)He has been performed with an InGaAs single-mode distributed Bragg reflection laser diode. The laser source provides as much as 120 mW of single-mode, single-frequency output in the 1083-nm region of the spectrum. Frequency tuning of the laser diode output by means of the junction temperature allows for mode-hop-free scanning of the entire 2(3)S-2(3)P manifold in both the (3)He and (4)He absorption spectra. The authors believe this to be the first report of semiconductor laser spectroscopy at this wavelength. Such a device will have significant applications in optical pumping, atomic cooling and trapping, fundamental nuclear studies, magnetometry, and gas dynamics.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
