Abstract
ABSTRACTAn arsenic atom displacement in As+ ion implanted Si induced by He+ ion beam irradiation has been studied by medium-energy (175keV) ion spectroscopy (MEIS). The He+ energy and dose dependences of the displaced arsenic atoms have been examined in the range of 30-175keV and ≤6×10-4C/cm2, respectively. The amount of the displaced arsenic atoms are found to be proportional to the dose and inversely proportional to the nuclear stopping power in the low-dose region, while it saturates at high-dose region. The dose-proportional region is composed of two different proportional coefficient segments.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
