Helium electron beam rf plasma for low-k surface functionalization

Abstract

A complex simulation approach is applied to determine optimal conditions for the functionalization of low-k materials in e-beam rf discharge generated by 1 keV electron beam in He. The possibility and mechanisms of methyl group elimination from low-k surfaces with low-energy He ions and fast He atoms are studied with ab initio dynamic density functional theory-based simulations. The effect of gas pressure, rf voltage, and rf frequencies on the ion energy and angle distribution functions is analyzed using a 1D Particle-in-Cell Monte Carlo model. The relative contribution of fast atoms in the surface functionalization is estimated. Ion fluxes on the 2D trench walls and bottom are calculated with the developed analytical approach.