Abstract
Titanium thin films incorporated with helium are produced by pulsedlaser deposition in an electron cyclotron resonance helium plasmaenvironment. Helium is distributed evenly in the film and a relativelyhigh He/Ti atomic ratio (~20%) is obtained from the protonbackscattering spectroscopy. This high concentration of helium leads toa surface blistering which is observed by scanning electron microscopy.Laser repetition rate has little influence on film characters.Substrate bias voltage is also changed for the helium incorporatingmechanism study, and this is a helium ion implantation process duringthe film growth. Choosing suitable substrate bias voltage, one canavoid the damage produced by ion implantation, which is always presentin general implantation case.
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