Helium behaviour in UO2 through low fluence ion implantation studies

Abstract

In this work we focus on experiments involving implantation of 500keV 3He ions in sintered polycrystalline material. Samples are implanted at low fluences (∼2×1013ions/cm2) and subsequently isothermally annealed in a highly sensitive thermal desorption spectrometry (TDS) device PIAGARA (Plateforme Interdisciplinaire pour l’Analyse des GAz Rares en Aquitaine). The helium fluencies studied are two to three orders of magnitude lower than previous Nuclear Reaction Analysis (NRA) experiments carried out on identical samples implanted at identical energies. The fractional release of helium obtained in the TDS experiments is interpreted using a three-dimensional axisymmetric diffusion model which enables results to be quantitatively compared to previous NRA data. The analysis shows that helium behaviour is qualitatively independent of ion fluency over three orders of magnitude: helium diffusion appears to be strongly inhibited below 1273K within the centre of the grains presumably as a result of helium bubble precipitation. The scenario involving diffusion at grain boundaries and in regions adjacent to them observed at higher fluencies is quantitatively confirmed at much lower doses. The main difference lies in the average width of the region in which uninhibited diffusion occurs.