Abstract
The behavior of helium implanted in sintered uranium dioxide disks has been investigated as a function of annealing temperature. UO 2 disks have been implanted with 1 MeV 3He at a nominal fluence of 5 × 10 16 3He cm −2 using a Van de Graaff accelerator. The 3He(d,α) 1H nuclear reaction analysis method was used to determine the helium depth profile in the UO 2 disks. Partial flaking was observed after annealing at 500 °C for local He concentration of 1 at.%. After annealing at 600 °C flaking has affected the whole surface. The formation of helium bubbles is discussed.
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