Abstract
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also, linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature, and fast (better than 1 ns) characterisation of all polarization parameters (Stokes parameters) of terahertz radiation. It paves the way towards terahertz ellipsometry and polarization sensitive imaging based on plasma effects in field-effect-transistors.
Highlights
We demonstrate that for a certain design of GaAs/AlGaAs high electron mobility transistors (HEMTs) and silicon modulation-doped field effect transistors (Si-MODFETs) the photosignal has a substantial contribution proportional to the degree of circular polarization of the incident radiation
We demonstrate that for certain conditions high electron mobility transistors excited by terahertz laser radiation yield a photoresponse which depends on the radiation handedness, in particular may change its sign by reversing the circular polarization of radiation from right to left handed
We show that, (i) optimization of the transistor design and (ii) the proper choice of the gate voltage, for which response to the linear polarization vanishes, should allow constructing a detector element with the responsivity just proportional to the radiation helicity, i.e. to the corresponding Stokes parameter
Summary
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. It paves the way towards terahertz ellipsometry and polarization sensitive imaging based on plasma effects in field-effect-transistors. The operation principle is based on the use of nonlinear properties of the two-dimensional (2D) plasma in the transistor channel [9] Both resonant [10, 12] and nonresonant [11] regimes of THz detection have been studied. We report on the observation of the helicity dependent photoresponse of FETs. We demonstrate that for a certain design of GaAs/AlGaAs high electron mobility transistors (HEMTs) and silicon modulation-doped field effect transistors (Si-MODFETs) the photosignal has a substantial contribution proportional to the degree of circular polarization of the incident radiation. While the fact that terahertz plasmonic broadband detectors are sensitive to
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