Abstract
AbstractA low temperature process for the oxidation of amorphous and polycrystalline silicon was studied using a helical resonator plasma source. Constant current anodization of amorphous silicon was performed at 350°C and 30 mtorr in an oxygen plasma. Oxidation rate data were analyzed by both parabolic and power law expressions: parabolic rate coefficient B = 23.45 nm2/min and power law rate coefficients α = 0.3807 and C* = 7.3 nm/minα. Oxidation at substrate floating conditions yielded thin oxides; the growth rate saturated after 20 mins, at a thickness of about 10 nm. For TFr fabrication, a two layer oxide was used. The first layer was grown by plasma oxidation to a thickness of about 10 nm to ensure a good interface, and the second layer deposited by PECVD to the final thickness of 35 nm. Electrical properties of control oxides grown on c-Si at the same conditions were promising, with a fixed oxide charge of 1.98 × 1011 charges/cm2 and a mean breakdown field of 5.3 MV/cm after post metallization anneal. The TF's had an average effective electron mobility of 31.1 V/cm2 and an average threshold voltage of 4.6 V.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
