Abstract
A novel one-dimensional helical nanocable structure has been synthesized through the reaction of carbon fiber with SiO vapor. The crystalline SiC core typically has diameters of 10–20nm with a helical periodicity of 30–40nm and is covered by a uniform layer of 10–20nm thick amorphous SiO2. A growth mechanism is proposed on the basis of difference in the growth rate between crystalline SiC core and amorphous SiO2 shell.
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