Abstract
The influence of the nanostructure height on the polarization of the surface emission was systematically investigated for In(Ga)As/InP quantum dashes. Polarization-resolved photoluminescence experiment was compared to theoretical considerations based on the multiband k·p theory and an analytical formula relating the polarization anisotropy to the nano-object geometry was derived. Substantial in-plane structure shape asymmetry induces a pronounced degree of linear polarization in surface emission, which depends strongly not only on the lateral aspect ratio but also on the nanostructure height. Additionally, strongly linearly polarized surface emission (up to 90%) was demonstrated for columnar quantum dashes by combining the in-plane elongation with a significantly increased height.
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