Abstract
CBrCl3 is shown to be a useful precursor for heavy p-type carbon doping of GaAsxP1−x grown via metalorganic chemical vapor deposition (MOCVD) across a range of compositions. Structural and electrical properties of the GaAsP films were measured for various processing conditions. Use of CBrCl3 decreased the growth rate of GaAsP by up to 32% and decreases x by up to 0.025. The dependence of these effects on precursor inputs is investigated, allowing C-doped GaAsP films to be grown with good thickness and compositional control. Hole concentrations of greater than 2×1019cm−3 were measured for values of x from 0.76 to 0.90.
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