Heavy ion time-of-flight ERDA of high dose metal implanted germanium

Abstract

Heavy ion time-of-flight ERDA and conventional RBS have been used to study the implantation profiles and oxygen uptake of Ge(100) implanted with high dose Ti and Cu ions from a MEVVA ion source. Cu implantations were made at an incident ion dose of 3 × 10 17 atoms/cm 2, with Ge substrate temperatures at ambient, 200°C and 300°C. A significant change in the Cu implantation profile was observed at 300°C, consistent with that seen in thermal annealing studies. Ti implantations were made at 5 × 10 17 atoms/cm 2, with substrate temperatures of 200°C, 300°C and 370°C. Implantation of Ti gave rise to a surface layer of average stoichiometry GeTi 0.8, which grew in thickness with implantation temperature. No significant reaction with air or moisture was seen in the damaged Ge(100) implantation surface region.