Abstract
Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories' microbeam and high- and low-energy broadbeam sources at the Grand Acce?le?rateur National d'Ions Lourds, Caen, France, and the University of Jyva?skyla?, Finland. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.
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