Abstract
This article investigates heavy-ion irradiation effects on perpendicular magnetic anisotropy spin-transfer torque magnetic tunnel junction devices (PMA STT-MTJs). The radiative campaign took place at the Université Catholique de Leuven (UCL) facility. The considered devices consist of STT p-MTJs purely magnetic memories and they were fabricated at SPINTEC using the most advanced CoFeB-MgO MTJ technology. Single-event upset (SEU) tolerance and modification of magnetic properties has been investigated.
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