Abstract
Heavy Ion Backscattering Spectroscopy (HIBS) using 12.4 MeV Carbon ion beams was used to examine GaAs/BaF2/GaAs heterostructures deposited on GaAs substrates by Molecular Beam Epitaxy (MBE). The ability of the heavier ions to separate the backscattered signals of Arsenic and Gallium, as well as the individual isotopes of Gallium, was used to verify the 50/50 stoichiometry of the MBE grown GaAs layers. This information is not readily available using traditional insitu MBE diagnostic techniques. HIBS spectra were analyzed using a modification of an existing Rutherford Backscattering Spectroscopy (RBS) analysis program. The HIBS spectra were also instrumental in identifying interdiffusion of BaF2 and GaAs layers taking place during MBE growth. This information was used to modify the MBE growth process to achieve sharper interfaces between the BaF2 and GaAs layers.
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