Abstract
Silicon samples which were ion- implanted with boron or arsenic were oxidized in high-pressure (10 atm) pyrogenic steam to determine the effects of heavy doping on the oxide growth rate. Heavy n-type doping (arsenic) was found to enhance the silicon oxidation rate, but the enhancement was not as great as for oxidation at atmospheric pressure. For p-type (boron) doping there was only slight enhancement for both high-pressure and 1-atm oxidations. Samples were then depth profiled using secondary-ion mass spectroscopy (SIMS) to observe the segregation of boron and arsenic at the Si:SiO2 interface. The effective coefficients of the impurities for high-pressure oxidation were found to deviate significantly from those for atmospheric pressure oxidation.
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